Specific heat of SbSI |
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| Authors: | ME Rosar WA Smith A Bhalla |
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| Institution: | 1. Philips Laboratories, Briarcliff Manor, NY 10510, U.S.A.;2. Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802, U.S.A. |
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| Abstract: | The temperature dependence of the specific heat of vapor and flux grown single crystal samples of ferroelectric antimony sulfur iodide (SbSI) was measured over a temperature range from 230K to 400K. CpE at Tc of the electrical flux and vapor grown samples are 0.078 cal/gmK and 0.076 cal/gmK respectively. ΔS and ΔQ at Tc are evaluated. The samples measured were grown by two different methods1,2]. Differences are observed between the measurements made on the samples, both in the magnitude of the specific heat and the temperature at which the ferroelectric transition takes place. These differences are caused by the different levels of oxygen impurities in the samples. |
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