On the dielectric function in zero-gap semiconductors

The q and ω dependent dielectric function is examined in the random phase approximation for zinc-blende type, zero-gap semiconductors such as HgTe or HgSe. A detailed analysis of the properties of this function based on the analytical formulae obtained for the case of a highly degenerate free-electron gas is performed. In the limiting cases of the static and dynamic dielectric functions a comparison to previous theories is given.