Transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering at low temperature |
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Authors: | X. Bie J.G. Lu L. Gong L. Lin B.H. Zhao Z.Z. Ye |
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Affiliation: | aState Key Laboratory of Silicon Materials, Zhejiang University, 38 Zhe Da Rd, Hangzhou 310027, People's Republic of China |
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Abstract: | Ga-doped ZnO (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. The structural, electrical, and optical properties of ZnO:Ga films were investigated in a wide temperature range from room temperature up to 400 °C. The crystallinity and surface morphology of the films are strongly dependent on the growth temperatures, which in turn exert an influence on the electrical and optical properties of the ZnO:Ga films. The film deposited at 350 °C exhibited the relatively well crystallinity and the lowest resistivity of 3.4 × 10−4 Ω cm. More importantly, the low-resistance and high-transmittance ZnO:Ga films were also obtained at a low temperature of 150 °C by changing the sputtering powers, having acceptable properties for application as transparent conductive electrodes in LCDs and solar cells. |
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Keywords: | ZnO:Ga Transparent conductive films DC magnetron sputtering Low temperature |
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