界面过渡层对黄光OLED发光性能的影响研究

研究了黄光OLED发光层间加入界面过渡层对OLED发 光性能的影响。实验制备新型黄光OLED的发光层结构为 CBP:R-4B/CBP:Girl:R-4B/CBP:GIrl,对比OLED的发光层结构为CBP:10%R-4B/CBP:10%GIrl、CBP: 10%GIrl/CBP:10%GIrl10%R-4B/CBP:10%R-4B和CBP:10%GIrl/CBP:10%R-4B。结果表明,在对比器 件的发光层界面间加入过渡层可显著提高器件的发光亮度和发光效率,新型器件在13V电压 下、电流密度为40.29mA/cm²时,发光亮度和发光效率分别达到 了11120cd/m²与27.59cd/A,较未加入过渡层的器件分别提 高了265%56.18%。分析认为,过渡层的 加入消除了由不同发光层间严格的界面效应而造成的界面缺 陷,增加了载流子传输速率与激子的复合效率,从而提升了器件的发光性能。

Effects of interfacial transition layer on luminescence properties of yellow OLE D

We investigate the effects of a transition layer on the performance of organic yellow electroluminescent (EL) device.The emitting layer structure was f abricated as CBP:10%R-4B/ CBP:10%GIrl,10%R-4B/CBP:10%GIrl.The contrast device emitting layer structure w as fabricated as CBP: 10%R-4B /CBP:10%GIrl.In order to study the influence of different structures of emitting layer on performance of the yellow organic light emitting diode (OLED) ,two contrast devices were fabricated,whose emitting layer structures are CBP:10% GIrl/CBP:10% GIrl10% R-4B/CBP:10%R-4B and CBP:10%GIrl/CBP:10%R-4B. The results show,the introduce of transition layer can significantly improve the bright- ness and current efficiency,which can reach 11120 c d/cm^2and 27.59 cd/A,respectively,265% and 56.18%,respectively compared with t he contrast device.