Ion implantation in semiconductors investigated by nuclear spectroscopy methods

Nuclear methods have proved to be very useful for structural investigations of implanted layers. Through the hyperfine interaction of the impurity atoms, valuable information can be obtained on the charge state, location and the vibrational state of implanted atoms. Changes in the atomic locations after various annealing processes were successfully understood by applying the M?ssbauer effect and perturbed angular correlation. This review pays special attention to the physical interactions which determine the location of implanted atoms, the ballistics, the size and the chemical effects. The structure of disordered layers formed after implantation is also reviewed and discussed.