Recent development of studies on the mechanism of resistive memories in several metal oxides

Resistive switching random access memories (RRAM) have been considered to be promising for future information technology with applications for non-volatile memory, logic circuits and neuromorphic computing. Key performances of those resistive devices are approaching the realistic levels for production. In this paper, we review the progress of valence change type memories, including relevant work reported by our group. Both electrode engineering and in-situ transmission electron microscopy (TEM) high-resolution observation have been implemented to reveal the influence of migration of oxygen anions/vacancies on the resistive switching effect. The understanding of resistive memory mechanism is significantly important for device applications.