Fabrication and characterization of graphene derived from SiC

Using novel ideas for the fabrication of epitaxial graphene (EG) on SiC, two forms of graphene termed as vertical aligned graphene sheets (VAGS) and graphene covered SiC powder (GCSP) were derived, respectively, from SiC slices and SiC powder, aimed for applications in energy storage and photocatalysis. Herein, the fabrication procedures, morphology characteristics, some intrinsic physical properties and performances for applications in field effect transistor (FET) and cold cathode field emission source are revealed and analyzed based on the graphene materials. The EG on a 2-inch SiC (0001) showed an average sheet resistance about 720 Ω/□ with a non-uniformity 7.2%. The FETs fabricated on the EG possessed a cutoff frequency 80 GHz. Based on the VAGS derived from a completely carbonized SiC slice, a magnetic phase diagram of graphene with irregular zigzag edges is also reported.