直接键合InP-GaAs结构界面的特性研究

通过对直接键合InP-GaAs结构的红外吸收光谱分析以及断面扫描电子显微镜观察发现，样品制备过程中不均匀的外加压强导致InP-GaAs交界面局部出现了不连续过渡的空间层，实验上将熔融石蜡渗透并被填充到该空间层，利用其对3.509μm波长光的强烈吸收特性可表征 这种局部的键合不连续区域，二维扫描测试样品不同区域的吸收谱得到3.509μm波长吸收强 度等值线图，从而描绘出外加压强的不均匀分布.实验上通过改进键合装置的施压均匀性， 得到了连续过渡界面且均匀键合的InP-GaAs结构，利用这种均匀键合技术有望制备大尺寸器 件例如光学微腔等. 关键词： 晶片直接键合 界面 红外吸收光谱

Study on infrared absorption of interfaces in direct wafer bonded InP-GaAs structures

Direct wafer bonded InP-GaAs structures are studied by FTIR infrared absorbance spectra and FESEM cross-sectional observations. Experiments show that the non-uniformity of bonding pressure during the fabricating step results in the appearance of a spacer-layer at the InP-GaAs interface. By melting wax and filling it into this spacer-layer, locally unbonded areas can be characterized upon the opt ical absorbance peaks at 3.509 μm. The 3.509 μm absorbance-intensity mapping images the non-uniform distribution of bonding pressure, which was obtained by t wo-dimensionally scanning measurement of infrared spectra of samples. Uniformly bonded InP-GaAs structures with uninterrupted interface are fabricated after imp roving the uniformity of pressure of fixture, which will be prospect of preparin g for large scale wafer bonding structures such as optical micro-cavity structur es.