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Spectral properties of a lateral p–n homojunction-structured visible silicon light-emitting diode fabricated by dressed-photon–phonon-assisted annealing |
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| Authors: | M Yamaguchi T Kawazoe T Yatsui M Ohtsu |
| Institution: | 1. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan 3. Specified Nonprofit Corporation Nanophotonics Engineering Organization, 1-20-10, Sekiguchi, Bunkyo-ku, Tokyo, 112-0014, Japan 2. International Center for Nano Electron and Photon Technology, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan |
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