| AlGaN/GaN场板结构高电子迁移率晶体管的场板尺寸优化分析 |
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| 引用本文： | 魏巍,郝跃,冯倩,张进城,张金凤. AlGaN/GaN场板结构高电子迁移率晶体管的场板尺寸优化分析[J]. 物理学报, 2008, 57(4): 2456-2461 |
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| 作者姓名： | 魏巍 郝跃 冯倩 张进城 张金凤 |
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| 作者单位： | 西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071 |
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| 基金项目： | 国家重点基础研究发展规划(批准号：2002CB311904)和国家自然科学基金(批准号：60676048，F040402)资助的课题. |
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| 摘 要： | 对不同场板尺寸的AlGaN/GaN 场板结构高电子迁移率晶体管进行了研究，建立简化模型分析场板长度对沟道电场分布的影响.结果表明，调整钝化层厚度和场板长度都可以调制沟道电场的分布形状，当场板长度较小时，随着长度的增大器件击穿电压随之增加，而当长度增大到一定程度后器件击穿电压不再增加.通过优化场板长度，器件击穿电压提高了64%，且实验结果与模拟结果相符.关键词：AlGaN/GaN击穿电压场板长度
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| 关 键 词： | AlGaN/GaN 击穿电压 场板长度 |
| 收稿时间： | 2007-08-25 |
| 修稿时间： | 2007-08-25 |
Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistor |
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| Wei Wei,Hao Yue,Feng Qian,Zhang Jin-Cheng,Zhang Jin-Feng. Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistor[J]. Acta Physica Sinica, 2008, 57(4): 2456-2461 |
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| Authors: | Wei Wei Hao Yue Feng Qian Zhang Jin-Cheng Zhang Jin-Feng |
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| Abstract: | Results of investigation on AlGaN/GaN field-plate high electron mobility transistor with different field-plate (FP) geometry are presented. The effect of the field-plate length LFP on the electric field distribution in the channel is thoroughly analyzed by establishing a simplified model. The simulation gives the following estimates: Both the FP length LFP and the thickness t of the insulator under the FP, can reshape the electric field distribution in the channel. If LFP is short, the breakdown voltage Vbr increases with LFP. When LFP increases to a certain extent, Vbr keeps invariable. After optimizing LFP in this paper, Vbr has been increased by 64%. Good agreement between experimental and simulation data is achieved. |
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| Keywords: | AlGaN/GaN breakdown voltage field-plate length |
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