| 基于TMAH溶液的PN结自停止腐蚀的研究 |
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| 引用本文： | 李俊伍,顾慧,黄见秋,秦明. 基于TMAH溶液的PN结自停止腐蚀的研究[J]. 电子器件, 2010, 33(3): 262-265 |
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| 作者姓名： | 李俊伍 顾慧 黄见秋 秦明 |
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| 作者单位： | 东南大学MEMS教育部重点实验室,南京,210096 |
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| 基金项目： | 国家863计划资助项目，航空基金资助项目 |
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| 摘 要： | MEMS器件的性能与尺寸密切相关.介绍了一种精确控制器件尺寸的各向异性腐蚀方法--基于改进TMAH溶液的PN结自停止腐蚀.这种方法几乎不刻蚀铝,从而与CMOS工艺良好地兼容.应用这种办法正面腐蚀,成功释放结构,尺寸与设计比较符合,证明了这种方法的可行性及易操作性.
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| 关 键 词： | 四甲基氢氧化铵 自停止腐蚀 Al钝化 |
Study of PN Junction Etch-stop in an Improved TMAH Si-etching Solution |
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| LI Junwu,GU Hui,HUANG Jianqiu,QIN Ming. Study of PN Junction Etch-stop in an Improved TMAH Si-etching Solution[J]. Journal of Electron Devices, 2010, 33(3): 262-265 |
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| Authors: | LI Junwu GU Hui HUANG Jianqiu QIN Ming |
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| Affiliation: | LI Junwu,GU Hui,HUANG Jianqiu,QIN Ming(Key Laboratory of MEMS of Ministry of Education,Southeast University,Nanjing 210096) |
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| Abstract: | The performance of MEMS(Micro-Electromechanical System) device is largely related to dimension.An PN junction etch-stop in an improved TMAH Si-etching solution is reported.The advantages of the process are the precision control of silicon dimension.Another important advantage is that no significant aluminum etching is observed during the process.The process is well CMOS compatible.It is believed that the process in this study is easy to handle,and is very useful for fabricating MEMS devices. |
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| Keywords: | TMAH etch-stop aluminum passivation |
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