Theoretical consideration of the growth kinetics for GaAs and GaSb

An extended MOMBE growth kinetics model is proposed, based on the Robertson model, to explain both the GaAs growth rate variation and modulated beam mass spectroscopy data reported by Martin and Whitehouse. In this model, we assume that (1) MEGa molecules react with ethyl-radicals to form DEGa, (2) excessive group-V molecules on the surface suppress the decomposition of DEGa and enhance the desorption of DEGa, (3) reaction of DEGa with ethyl-radicals to form TEGa is negligible, and (4) effective surface coverage of excessive group-V atoms during growth is determined by the double layer adsorption model including desorption parameters for group-V molecules. The first assumption (1) is found to be a dominant process to explain the behaviour of DEGa desorption at high temperatures. This model can reproduce the dependences of both growth rate and desorbing rate of Ga alkyls on substrate temperature during GaAs MOMBE growth. The use of Sb instead of As produces a significant change in the growth rate variation with substrate temperature and group-V flux for the growth of GaSb, in spite of the use of the same TEGa flow rate. This can be rationalized by the difference in the desorption parameters for Sb and As.