| PLD法制备高介电调谐率的纳米晶BZT薄膜 |
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| 引用本文： | 唐新桂,梁建烈,农亮勤,熊惠芳,陈王丽华.PLD法制备高介电调谐率的纳米晶BZT薄膜[J].电子元件与材料,2007,26(1):46-48,51. |
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| 作者姓名： | 唐新桂 梁建烈 农亮勤 熊惠芳 陈王丽华 |
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| 作者单位： | 广西民族大学物理与电子工程学院,广西,南宁,530006;广东工业大学物理与光电工程学院,广东,广州,510006;广西民族大学物理与电子工程学院,广西,南宁,530006;广东工业大学物理与光电工程学院,广东,广州,510006;香港理工大学应用物理系,香港,九龙 |
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| 摘 要： | 用脉冲激光沉积工艺制备了Ba(ZrxTi1-x)O3(x=0.25,0.30简称BZT25和BZT30)介电薄膜。在650℃原位退火10 min,薄膜为(111)取向柱状生长的晶粒,取向度分别为0.45和0.75。BZT25和BZT30薄膜的平均晶粒尺寸分别为50 nm和60 nm。在室温、1 MHz和3×105 V/cm条件下,BZT25的最大εr和调谐率分别达到563和65%,BZT30的最大εr和调谐率分别达到441和57%。薄膜为(111)取向生长,主要是基于薄膜与底电极Pt界面层立方相结构Pt3Ti的诱导,即(111)Pt3Ti和(111)BZT的晶格匹配。
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| 关 键 词： | 无机非金属材料 锆钛酸钡薄膜 脉冲激光沉积 柱状晶粒 介电调谐特性 探测优值 |
| 文章编号： | 1001-2028（2007）01-0046-03 |
| 修稿时间： | 2006-08-29 |
High dielectric tunability of nanocrystalline Ba(ZrxTi1-x)O3 thin films prepared by pulsed laser deposition |
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| TANG Xin-gui,LIANG Jian-lie,NONG Liang-qin,XIONG Hui-fang,CHAN WONG lai-wah.High dielectric tunability of nanocrystalline Ba(ZrxTi1-x)O3 thin films prepared by pulsed laser deposition[J].Electronic Components & Materials,2007,26(1):46-48,51. |
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| Authors: | TANG Xin-gui LIANG Jian-lie NONG Liang-qin XIONG Hui-fang CHAN WONG lai-wah |
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| Abstract: | Ba(ZrxTi1-x)O3(x=0.25,0.30,abbreviated as BZT25 and BZT30,respectively) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates prepared by a pulsed laser deposition at 650 ℃.The thin films were in situ annealed at 650 ℃ for 10 min,the highly(111)-oriented columnar-grained BZT thin films were obtained.The εr and dielectric tunabilitie of BZT25 and BZT30 thin films is 563 and 65 %,441 and 57 %,respectively.The high tunability is attributed to the(111) texture of the film and lager cluster grains.The highly(111)-oriented BZT thin films on Pt/Ti/SiO2/Si substrate are attributed to the(111) texture of the Pt3Ti interface layer between the film and bottom electrode. |
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| Keywords: | non-metallic inorganic material BZT thin film PLD columnar-grained dielectric tunability figure of merit |
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