| Institution: | 1. Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 210093, China;2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Academy of Science, Beijing 100085, China;1. Key Laboratory of Metastable Materials Science and Technology, College of Material Science and Engineering, Yanshan University, Qinhuangdao 066004, China;2. Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China;1. College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China;2. Key Lab of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China;3. College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024, China;4. School of Energy and Power Engineering, Beihang University, Beijing 100191, China;5. Beijing Key Laboratory of Aero-Engine Structure and Strength, Beijing 100191, China;1. Institute of Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wroclaw, Poland;2. Faculty of Electronics, Wroclaw University of Technology, Wroclaw, Poland;1. Terahertz Center, University of Regensburg, Regensburg, Germany;2. Ioffe Institute, St. Petersburg, Russia;3. Technische Physik University of Würzburg, Würzburg, Germany;4. University of St Andrews, St Andrews, United Kingdom |
