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Electron irradiation induced defects in undoped and Te doped gallium phosphide
Authors:G.E. Zardas  Ch.I. Symeonides  P.C. Euthymiou  G.J. Papaioannou  P.H. Yannakopoulos  M. Vesely
Affiliation:1. Institut d Electronique Fondamentale, Univ Paris-Sud, CNRS UMR 8622, F-91405 Orsay Cedex, France;2. Solid State Physics Section, Physics Department, National and Kapodistrian University of Athens, Panepistimiopolis Zografos, Athens 15784, Greece;3. Laboratoire de Photonique et Nanostructures, CNRS UPR 20, F-91460 Marcoussis, France;4. Institut d''Electronique, de Microélectronique et de Nanotechnologie, CNRS UMR 8520, F-59652 Villeneuve d''Ascq Cedex, France;5. Thales Research & Technology France, F-91767 Palaiseau Cedex, France;1. School of Chemical Engineering, National Technical University of Athens, 15780 Athens, Greece;2. Energy Research Center Niedersachsen, 38640 Goslar, Germany;3. Institut für Elektrische Energietechnik, Clausthal University of Technology, 38678 Clausthal-Zellerfeld, Germany;4. GEMaC UMR 8635, CNRS Université de Versailles-Saint-Quentin, F-78035 Versailles Cedex, France
Abstract:The aim of the present work is to investigate defects that are introduced to Gallium Phosphide (GaP) by electron irradiation as well as their dependence on the background doping. Undoped and Te doped n-type GaP have been irradiated with 1.5 MeV electrons at fluences of 5×1016 e/cm2. Deep level transient spectroscopy assessment revealed the dependence of the trap characteristics on background doping.
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