Enhanced electron field emission from dense Si nano-dots prepared by laser crystallization of ultrathin amorphous Si films |
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| Authors: | Jun Xu Jiang Zhou Yao Yao Zhanhong Cen Fenqi Song Ling Xu Jianguo Wan Kunji Chen |
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| Institution: | 1. Institute for Physical Research of National Academy of Sciences of Armenia, Ashtarak 0203, Armenia;2. Yerevan State University, Physics Department, 1, Alek Manukyan St., Yerevan 0025, Armenia |
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| Abstract: | Dense Si nano-dots with a surface area density of >1010 cm?2 were fabricated by excimer laser induced crystallization of 15 nm-thick amorphous Si thin films. The enhanced electron field emission characteristics were found from laser irradiated samples. The threshold electric field is as low as 9.8V/μm and the field enhancement factor can reach as large as 719, which is compatible with the other good cold cathode materials. The improvements in field emission behavior can be associated with the change in the surface morphology after laser irradiation as well as the enhanced internal electric field due to the formation of Si nano-dots within the films. |
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