Bias-tunable electron transport properties in a nanostructure with two parallel-magnetic barriers |
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| Authors: | Jian-Duo Lu |
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| Affiliation: | 1. Grupo de Materiales y Sistemas Catalíticos, Departamento de Física, Universidad Nacional del Sur, Avda. Alem 1253, Bahía Blanca, B8000CPB, Argentina;2. CONICET;1. Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China;2. Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China;3. Department of Physics, Nanchang Institute of Technology, Nanchang 330099, China |
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| Abstract: | In this paper, the spin-dependent electron transport is studied in detail in a nanostructure under an applied bias and two parallel-magnetic barriers. We find that the large spin polarization can be achieved in such a device, and the degree of electron-spin polarization strongly depends on the applied bias. These interesting properties may provide an alternative scheme to spin-polarize electrons into semiconductors, and this device may be used as a bias-tunable spin filter. |
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