Bandgap widening in highly conducting CdO thin film by Ti incorporation through radio frequency magnetron sputtering technique |
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| Authors: | B Saha R Thapa KK Chattopadhyay |
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| Institution: | 1. Nano-Science Lab. & Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;2. Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia;3. Thin Film Laboratory, Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;4. Nanomaterial Laboratory, Physics Department, Faculty of Science, South Valley University, Qena 83523, Egypt;5. Department of Physics, Faculty of Science, Firat University, Elazig, Turkey;1. Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA;2. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA;1. Hebei Key Lab of Optic-electronic Information and Materials, The College of Physics Science and Technology, Hebei University, Baoding, 071002, China;2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;1. Department of Electrical and Computer Engineering, Global Frontier Center for Multiscale Energy Systems, Seoul National University, Seoul 151-744, Republic of Korea;2. Department of Physics, Coimbatore Institute of Technology, Coimbatore, India;3. Faculty of Engineering and Business Administration, Bergen University College, Bergen, Norway |
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| Abstract: | Transparent and highly conducting thin films of cadmium oxide (CdO) with titanium doping were synthesized by using radio frequency magnetron sputtering technique. The thin films were deposited on glass and silicon substrates with different percentages of titanium at a fixed substrate temperature 473 K and a fixed pressure of 0.1 mbar in Ar atmosphere. The deposited films were characterized by studying their crystallographic structure, optical and electrical properties. X-ray diffractometer, atomic force microscope, UV–Vis–NIR spectrophotometer, and X-ray photoelectron spectrophotometer were used for different characterizations. All the films have a rock-salt structure. A systematic increase in the optical bandgap was found for the CdO thin films with Ti doping, so that it can be considered as a candidate material for different optoelectronic device applications. Electrical conductivity was also found to increase with Ti doping concentration. |
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