Ellipsometric detection of GaAs(0 0 1) surface hydrogenation in H2 atmosphere |
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Authors: | A.V. Vasev |
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Affiliation: | Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Laboratory of III-V MBE, Acad. Lavrentiev Avenue, 13, 630090 Novosibirsk, Russia |
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Abstract: | Optical properties of MBE-grown GaAs(0 0 1) surfaces have been studied by spectroscopic ellipsometry under dynamic conditions of ramp heating and cooling after desorption of passivating As-cap-layer with low pressure H2 atmosphere (14 Torr) applied to the surface. The temperature dependence of GaAs pseudo-dielectric function with atomically smooth (0 0 1) surface carrying the fixed Ga-rich (4 × 2) reconstruction was obtained for the temperature range of 160–600 °C. It is shown ellipsometrically that GaAs(0 0 1) heating in the molecular hydrogen atmosphere results in the formation of hydrogenated layer on the surface. |
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