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Carrier dynamics in GaN at extremely low excited carrier densities
Authors:J Mickevicius  G Tamulaitis  P Vitta  A Zukauskas  MS Shur  J Zhang  J Yang  R Gaska
Institution:1. Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius, Lithuania;2. Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, NY 12180, USA;3. Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USA;1. Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk, 38430 Republic of Korea;2. Institute of Quantum Information Processing and Systems, University of Seoul, 90 Jeonnong, Tongdaimoon-Gu, Seoul, 130-743 Republic of Korea;3. Physics Department, Charles E Schmidt College of Science, Florida Atlantic University, Boca Raton, FL 33431-0991, USA;4. WOORIRO Co. Ltd., 102-22 Pyeongdongsandan 6beon-ro, Gwangsan-gu, Gwangju, 62453, Republic of Korea;1. Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan;2. Institute of Environmental Science and Technology, The University of Kitakyushu, 1-1 Hibikino, Wakamatsu-ku, Kitakyushu-shi, Fukuoka 808-0135, Japan
Abstract:Carrier dynamics in GaN was studied using fluorescence lifetime measurement in the frequency domain technique in the temperature range from 8 to 300 K at very low and very high excitation levels. The study was performed in a high-quality GaN epilayer exhibiting a room-temperature nonequilibrium carrier lifetime of 2 ns, which was determined by a light-induced transient grating (four-wave mixing) technique. The results reveal the roles of donor–acceptor pair recombination and conduction band–acceptor recombination in yellow luminescence band formation.
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