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高调谐BST薄膜制备及介电性能研究
引用本文:俞健,廖家轩,金龙,魏雄邦,汪澎,尉旭波,徐自强.高调谐BST薄膜制备及介电性能研究[J].物理学报,2011,60(7):77701-077701.
作者姓名:俞健  廖家轩  金龙  魏雄邦  汪澎  尉旭波  徐自强
作者单位:电子科技大学电子科学技术研究院,成都 610054
基金项目:电子科技大学中青年学术带头人培养计划(批准号:Y02018023601053)和中央高校基本科研业务费专项资金(批准号:ZYGX2009X018)资助的课题.
摘    要:用改进的溶胶凝胶(sol-gel)法逐层制备钛酸锶钡(Ba0.6Sr0.4TiO3, BST)薄膜,研究中间热处理(preheating,PT)对薄膜结构及介电性能的影响.X射线衍射(XRD)表明,BST薄膜主要沿(110)方向生长,对应立方钙钛矿结构,PT使晶化增强.X射线光电子能谱(XPS)表明,PT促使表面非钙钛矿结构向钙钛矿结构转变.原子力显微镜(AFM)和介电性能测试表明,随着PT频次的增加,薄膜形貌改善,表面粗糙度降低,介电调谐 关键词: 中间热处理 高调谐 溶胶凝胶法 钛酸锶钡

关 键 词:中间热处理  高调谐  溶胶凝胶法  钛酸锶钡
收稿时间:2010-08-19

Preparation and dielectric properties of BST films with high tunability
Yu Jian,Liao Jia-Xuan,Jin Long,Wei Xiong-Bang,Wang Peng,Wei Xu-Bo and Xu Zi-Qiang.Preparation and dielectric properties of BST films with high tunability[J].Acta Physica Sinica,2011,60(7):77701-077701.
Authors:Yu Jian  Liao Jia-Xuan  Jin Long  Wei Xiong-Bang  Wang Peng  Wei Xu-Bo and Xu Zi-Qiang
Institution:Research Institute of Electronic Science and Technology of UESTC, Chengdu 610054, China;Research Institute of Electronic Science and Technology of UESTC, Chengdu 610054, China;Research Institute of Electronic Science and Technology of UESTC, Chengdu 610054, China;Research Institute of Electronic Science and Technology of UESTC, Chengdu 610054, China;Research Institute of Electronic Science and Technology of UESTC, Chengdu 610054, China;Research Institute of Electronic Science and Technology of UESTC, Chengdu 610054, China;Research Institute of Electronic Science and Technology of UESTC, Chengdu 610054, China
Abstract:Six-layer Ba0.6Sr0.4TiO3 (BST) films are prepared by an improved sol-gel method. The effects of various preheating methods on morphology and dielectric properties are studied. XRD results reveal that all BST films preferentially grow along the (110) direction and have cubic perovskite structures, and that preheating can obviously enhance crystallization. XPS results show that the preheating can also decrease surface non-perovskite structure and cause perovskite structure to increase markedly. AFM results display that as the preheating number increases, BST films show significant improvement on morphology with surface roughness reducing. The dielectric property measurement exhibits that tunability is remarkably increased with the increase of preheating number. BST film with all layers preheated shows that its tunability exceeds 55% at 20V bias voltage, while BST film with odd number layers preheated presents a moderate capacitance, lower dielectric loss, approximately 50% tunability at 20V bias voltage and significant increase in figure of merit (FOM) with the bias voltage. The excellent combination of dielectric properties can satisfy the application demand of microwave tunable devices. Also, the relevant mechanism of high tunability is discussed.
Keywords:preheating  high tunability  sol-gel  BST
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