| 纳米折叠InGaN/GaN LED材料生长及器件特性 |
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| 引用本文： | 陈贵锋,谭小动,万尾甜,沈俊,郝秋艳,唐成春,朱建军,刘宗顺,赵德刚,张书明.纳米折叠InGaN/GaN LED材料生长及器件特性[J].物理学报,2011,60(7):76104-076104. |
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| 作者姓名： | 陈贵锋 谭小动 万尾甜 沈俊 郝秋艳 唐成春 朱建军 刘宗顺 赵德刚 张书明 |
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| 作者单位： | (1)河北工业大学材料学院,河北省新型功能材料实验室,天津 300130; (2)中国科学院半导体研究所,集成光电子学国家重点实验室,北京 100083; (3)中国科学院理化技术研究所,北京 100190 |
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| 基金项目： | 天津市自然科学基金(批准号:10JCYBJC03000)和中国科学院半导体研究所集成光电子国家重点实验室资助的课题. |
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| 摘 要： | 在以自组织Ni纳米岛为掩膜制作的n-GaN纳米柱上,利用MOCVD方法外延生长了具有折叠InGaN/GaN多量子阱(MQW)的LED结构外延片,进而制作了LED器件.外延片上中下游的光致荧光测试,结果表明外延片具有很好的均匀性.用该外延片制作的LED的电致发光谱,随注入电流增加没有明显蓝移,这表明纳米结构能更好地释放应力,纳米柱上外延生长的多量子阱,具有较低的压电极化电场.正向工作电流20 mA时,LED器件的工作电压为4.6 V.
关键词：
纳米柱LED
光致发光
电致发光
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| 关 键 词： | 纳米柱LED 光致发光 电致发光 |
| 收稿时间： | 2010-09-25 |
Growth and device characteristics of nano-folding InGaN/GaNmultiple quantum well LED |
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| Chen Gui-Feng,Tan Xiao-Dong,Wan Wei-Tian,Shen Jun,Hao Qiu-Yan,Tang Cheng-Chun,Zhu Jian-Jun,Liu Zong-Shun,Zhao De-Gang and Zhang Shu-Ming.Growth and device characteristics of nano-folding InGaN/GaNmultiple quantum well LED[J].Acta Physica Sinica,2011,60(7):76104-076104. |
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| Authors: | Chen Gui-Feng Tan Xiao-Dong Wan Wei-Tian Shen Jun Hao Qiu-Yan Tang Cheng-Chun Zhu Jian-Jun Liu Zong-Shun Zhao De-Gang and Zhang Shu-Ming |
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| Institution: | Key Lab. for New Type of Functional Materials in Hebei Province, Hebei University of Technology, Tianjing 300130, China;Key Lab. for New Type of Functional Materials in Hebei Province, Hebei University of Technology, Tianjing 300130, China;Key Lab. for New Type of Functional Materials in Hebei Province, Hebei University of Technology, Tianjing 300130, China;Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China;Key Lab. for New Type of Functional Materials in Hebei Province, Hebei University of Technology, Tianjing 300130, China;Key Lab. for New Type of Functional Materials in Hebei Province, Hebei University of Technology, Tianjing 300130, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academyof Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academyof Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academyof Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academyof Sciences, Beijing 100083, China |
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| Abstract: | GaN-based LED wafers with nano-folding InGaN/GaN multiple quantum wells (MQWs) are grown on n-GaN nanopillar array templates which are fabricated using self assembled Ni nanodots as etching mask. Photoluminescence (PL) spectra of the wafer show uniform light emission wavelength over the whole area of it. No blue shift of the main peak is observed in the electroluminescence (EL) spectra of the LED devices fabricated with the wafer as the injection current increases from 10 mA to 80 mA. This can be ascribed to the reduced quantum confinement Stark effect (QCSE) and the resulting less band gap tilted by strain relaxation in the nano-folded MQWs. The device shows an excellent rectifying behavior with a forward voltage of 4.6 V under 20 mA injection current. |
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| Keywords: | nano-LED photoluminescence (PL) electroluminescence (EL) |
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