Quasi-three-level Nd:YVO4 laser operation at 914 nm under 879 nm diode laser pumping |
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| Authors: | J. Gao X. Yu B. Wei X. D. Wu |
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| Affiliation: | 1.Suzhou Institute of Biomedical Engineering and Technology,Chinese Academy of Sciences,Suzhou, Jiangsu,P. R. China;2.National Key Laboratory of Tunable Laser Technology,Harbin Institute of Technology,Harbin,P. R. China |
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| Abstract: | We present experimental investigation on quasi-three-level Nd:YVO4 laser operation at 914 nm under 879 nm diode pumping directly into emitting level. A maximal output power of 3.0 W under an absorbed pump power of 13.4 W was got, corresponding to an optical conversion efficiency of 22.4% and a slope efficiency of 40.3%. To the best of our knowledge, this is the first report on a Nd:YVO4 laser at 914 nm using rod-type single crystal as the gain medium and end pumped by diode directly into the emitting level. |
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