| 应变Si/(001)Si1-xGex电子迁移率 |
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| 引用本文： | 王晓艳,张鹤鸣,宋建军,马建立,王冠宇,安久华. 应变Si/(001)Si1-xGex电子迁移率[J]. 物理学报, 2011, 60(7): 77205-077205 |
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| 作者姓名： | 王晓艳 张鹤鸣 宋建军 马建立 王冠宇 安久华 |
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| 作者单位： | (1)西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071; (2)西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071;宝鸡文理学院电子电气工程系,宝鸡 721007 |
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| 基金项目： | 国家部委项目(批准号:51308040203,9140A08060407DZ0103,6139801)资助的课题. |
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| 摘 要： | 依据离化杂质散射、声学声子散射和谷间散射的散射模型,在考虑电子谷间占有率的基础上,通过求解玻尔兹曼方程计算了不同锗组分下,不同杂质浓度时应变Si/(001)Si1-xGex的电子迁移率.结果表明:当锗组分达到0.2时,电子几乎全部占据Δ2能谷;低掺杂时,锗组分为0.4的应变Si电子迁移率与体硅相比增加约64%;对于张应变Si NMOS器件,从电子迁移率角度来考虑不适合做垂直沟道.选择相应的参数,该方关键词：电子谷间占有率散射模型锗组分电子迁移率
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| 关 键 词： | 电子谷间占有率 散射模型 锗组分 电子迁移率 |
| 收稿时间： | 2010-08-03 |
Electron mobility of strained Si/(001)Si1- x Ge x |
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| Wang Xiao-Yan,Zhang He-Ming,Song Jian-Jun,Ma Jian-Li,Wang Guan-Yu and An Jiu-Hua. Electron mobility of strained Si/(001)Si1- x Ge x [J]. Acta Physica Sinica, 2011, 60(7): 77205-077205 |
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| Authors: | Wang Xiao-Yan Zhang He-Ming Song Jian-Jun Ma Jian-Li Wang Guan-Yu An Jiu-Hua |
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| Affiliation: | Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Department of Electron and Electricity Engineering, Baoji University of Arts and Sciences, Baoji 721007, China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | According to the model of ionized impurity scattering, acoustic phonon intravalley scattering and optical phonon intervalley scattering, the dependences of electron mobility of strained Si/(001)Si1-xGex with different germanium constituents on impurity concentration are studied based on Subband occupation by solving Boltzmann equation. The results show that electrons almost totally occupy the Δ2 valley when germanium constituent is up to 0.2, and the mobility with germanium constituent 0.4 is 64% higher than that of the unstrained silicon at low impurity concentration; and vertical channel is not so good for tensile stained Si devices. The model can also be used to calculate the electron mobility of other crystal face with an arbitrarily orientation if the parameters are correctly chosen, so the model offers some useful foundation for strained silicon devices and circuits. |
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| Keywords: | subband occupancy scattering model germanium constituent electron mobility |
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