| GaAs自旋注入及巨霍尔效应的研究 |
| |
| 引用本文： | 王志明. GaAs自旋注入及巨霍尔效应的研究[J]. 物理学报, 2011, 60(7): 77203-077203 |
| |
| 作者姓名： | 王志明 |
| |
| 作者单位： | 南京理工大学机械工程学院,南京 210094;南京大学固体微结构物理国家重点实验室,南京 210093 |
| |
| 基金项目： | 南京大学固体微结构物理实验室开发课题(批准号:M23005)资助的课题. |
| |
| 摘 要： | 在自旋电子学研究中,一般以超晶格结构、自旋阀、隧道结来实现,另一种自旋注入典型方法是稀磁半导体材料,如GaMnAs,本文通过颗粒膜实现自旋注入,利用磁控溅射法将Fe颗粒嵌入GaAs阵体上,制备了(GaAs)19Fe81颗粒膜样品,在室温条件下观测到15 μΩ ·cm最大饱和霍尔电阻率,该效应比纯铁的饱和霍尔电阻率大了一个数量级,成功地实现了自旋注入.关键词：自旋注入颗粒膜巨霍尔效应
|
| 关 键 词： | 自旋注入 颗粒膜 巨霍尔效应 |
| 收稿时间： | 2010-09-02 |
Spin injection in GaAs and giant Hall effect |
| |
| Wang Zhi-Ming. Spin injection in GaAs and giant Hall effect[J]. Acta Physica Sinica, 2011, 60(7): 77203-077203 |
| |
| Authors: | Wang Zhi-Ming |
| |
| Affiliation: | Institute of Mechanical Engineering Nanjing University of Science and Technology, Nanjing 210094, China;Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China |
| |
| Abstract: | In spintronics, general spin injection is achieved by the superlattice, spin valve, tunnel junction, other typical method of spin injection is to dilute magnetic semiconductor such as: GaMnAs. In this paper, spin Fe particles are injected into the GaAs matrix by using the magnetron sputtering to form the granular film (GaAs)19Fe81, in which saturated Hall resistivity ρxys is shown to be 15 μΩ·cm at room temperature, which is about 2 orders larger than that of pure Fe. So the spin injection is successfully realized. |
| |
| Keywords: | spin injection granular film Hall effect |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
|
点击此处可从《物理学报》下载免费的PDF全文 |
|
