<Emphasis Type="Italic">Y</Emphasis> and <Emphasis Type="Italic">Z</Emphasis> luminescence of polycrystalline cadmium telluride |
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Authors: | V V Ushakov and Yu V Klevkov |
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Institution: | 1.P. N. Lebedev Physical Institute,Russian Academy of Sciences,Moscow,Russia |
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Abstract: | The properties of polycrystalline CdTe with a grain size of 5–30 μm have been investigated using the microphotoluminescence
methods of spectral analysis and topography. This material has been prepared by direct synthesis in a vapor flow of components
at a low temperature. The dominance of the Y and Z bands in the spectra reflects a nonequilibrium character of the crystallization processes. The superlinear dependences of
the luminescence intensity on the level of the band-to-band excitation indicate the exciton nature of the corresponding transitions.
The activation energies for temperature quenching of luminescence in the temperature range T = 100–150 K are found to be 120 meV for the Y luminescence and 180 meV for the Z luminescence, which correspond to the dissociation of excitons bound to defects with the transition of charge carriers to
the conduction and valence bands. The monochromatic topography data indicate that Y and Z defects have different material bases. |
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