| 同位素示踪法研究铜薄膜在水汽中的氧化传质机理 |
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| 引用本文： | 曹思,龚佳,钟澄,李劲,蒋益明.同位素示踪法研究铜薄膜在水汽中的氧化传质机理[J].物理学报,2011,60(7):78101-078101. |
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| 作者姓名： | 曹思 龚佳 钟澄 李劲 蒋益明 |
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| 作者单位： | 复旦大学材料科学系,上海 200433 |
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| 基金项目： | 国家自然科学基金(批准号:50871031,50701010),上海市自然科学基金(批准号:09ZR1402600)和上海市基础研究重点项目(批准号:09JC1401600)资助的课题. |
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| 摘 要： | 采用H162O/H182O接续氧化并结合同位素示踪方法,研究了铜薄膜在水汽中氧化的传质机理.将真空热蒸发制备的铜薄膜样品,分别在H162O,H182O中以及H162O/H182O接续进行氧化处理;利用X射线衍射(XRD)研究了氧化产物的形态和结构
关键词：
同位素示踪
短路扩散
铜薄膜
182O')" href="#">H182O
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| 关 键 词： | 同位素示踪 短路扩散 铜薄膜 H182O |
| 收稿时间： | 1/5/2010 12:00:00 AM |
Transport mechanism of copper thin film oxidation by isotopic labeling |
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| Cao Si,Gong Ji,Zhong Cheng,Li Jin and Jiang Yi-Ming.Transport mechanism of copper thin film oxidation by isotopic labeling[J].Acta Physica Sinica,2011,60(7):78101-078101. |
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| Authors: | Cao Si Gong Ji Zhong Cheng Li Jin and Jiang Yi-Ming |
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| Institution: | Department of Materials Science, Fudan University, Shanghai 200433, China;Department of Materials Science, Fudan University, Shanghai 200433, China;Department of Materials Science, Fudan University, Shanghai 200433, China;Department of Materials Science, Fudan University, Shanghai 200433, China;Department of Materials Science, Fudan University, Shanghai 200433, China |
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| Abstract: | In this paper, a new method is proposed to investigate the transport mechanism of copper thin film oxidation in water vapor using H162O/H182O isotopic labeling. Copper thin films are prepared on glass substrates by vacuum deposition. The structure of copper oxide film is analysed by X-ray diffraction (XRD). The distributions of16O and18O in the oxide film are analysed by secondary ion mass spectroscopy (SIMS). The results demonstrate that the transport mechanism of copper film oxidation is short-circuit diffusion mechanism. |
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| Keywords: | isotopic labeling short circuit diffusion copper thin film H182O |
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