| 亚100 nm应变Si/SiGe nMOSFET阈值电压二维解析模型 |
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| 引用本文： | 王冠宇,张鹤鸣,王晓艳,吴铁峰,王斌.亚100 nm应变Si/SiGe nMOSFET阈值电压二维解析模型[J].物理学报,2011,60(7):77106-077106. |
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| 作者姓名： | 王冠宇 张鹤鸣 王晓艳 吴铁峰 王斌 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071 |
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| 基金项目： | 国家部委资助项目(批准号:51308040203, 6139801),中央高校基本科研业务费(批准号:72105499, 72104089)和陕西省自然科学基础研究计划(批准号:2010JQ8008)资助的课题. # Email:SiGeBiCMOS@foxmail.com |
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| 摘 要： | 本文基于二维泊松方程,建立了适用于亚100 nm应变Si/SiGe nMOSFET的阈值电压理论模型.为了保证该模型的准确性,同时考虑了器件尺寸减小所导致的物理效应,如短沟道效应,量子化效应等.通过将模型的计算结果与二维器件模拟器ISE的仿真结果进行对比分析,证明了本文提出的模型的正确性.最后,还讨论了亚100 nm器件中常规工艺对阈值电压的影响.该模型为亚100 nm小尺寸应变Si器件的分析设计提供了一定的参考.
关键词：
亚100nm
应变Si/SiGe nMOSFET
二维表面势
阈值电压
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| 关 键 词： | 亚100nm 应变Si/SiGe nMOSFET 二维表面势 阈值电压 |
| 收稿时间： | 2010-06-29 |
Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET |
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| Wang Guan-Yu,Zhang He-Ming,Wang Xiao-Yan,Wu Tie-Feng and Wang Bin.Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET[J].Acta Physica Sinica,2011,60(7):77106-077106. |
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| Authors: | Wang Guan-Yu Zhang He-Ming Wang Xiao-Yan Wu Tie-Feng and Wang Bin |
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| Institution: | Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University,Xi'an 710071,China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University,Xi'an 710071,China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University,Xi'an 710071,China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University,Xi'an 710071,China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University,Xi'an 710071,China |
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| Abstract: | In this paper, based on the two-dimensional (2D) Possion's equation, an analytical model of threshold voltage, which is applied to a sub-100nm strained-Si/SiGe nMOSFET, is pro- posed. The secondary effects induced by reducing size such as short-channel effects, quantum mechanical effects are also taken into consideration in order to ensure the accuracy of the model. Then the evidence for the validity of our model is derived from the comparison between analytical results and the simulation data from the 2D device simulator ISE. Finally, the influence of conventional arts in sub-100 nm device fabrication on threshold voltage is also discussed. The proposed model can also be easily used for reasonable analysis and design of sub-100nm strained-Si/SiGe nMOSFET. |
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| Keywords: | sub-100 nm strained-Si/SiGe nMOSFET 2D surface potential threshold voltage |
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