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Characterization of silicon wafers through deposition of self-assembled monolayers |
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| Authors: | B. Basnar J. Schnöller K. Föttinger G. Friedbacher U. Mayer H. Hoffmann L. Fabry |
| Affiliation: | Institute of Analytical Chemistry, Vienna University of Technology, Getreidemarkt 9/151, 1060 Wien, Austria, AT Institute of Inorganic Chemistry, Vienna University of Technology, Getreidemarkt 9/153, 1060 Wien, Austria, AT Wacker Siltronic AG, Johannes Hess Stra?e 24, 84489 Burghausen, Germany, DE |
| Abstract: | AFM imaging of the adsorption of self-assembled octadecylsiloxane (ODS) monolayers has been utilized for probing surface properties of silicon wafers. It has been found that both growth rate of the organic films and island size of sub-monolayer films are influenced by the doping level of the wafers as well as by the surface finishing step during wafer production. Generally, higher doping levels led to lower adsorption rates and smaller islands. Variation of the sample pretreatment used for surface finishing of similarly doped wafers led only to significant changes of the island size, but not of the surface coverage. The results presented open up a valuable perspective for characterizing the surface homogeneity of silicon wafers which is an important parameter for monitoring-wafers in semiconductor industry. Received: 26 June 2000 / Revised: 26 July 2000 / Accepted: 1 August 2000 |
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