Effect of gravitation vector orientation relative to the solidification front on the micro- and macrohomogeneity of semiconductor crystals grown under terrestrial and space conditions |
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| Authors: | V I Strelov B G Zakharov V K Artemiev |
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| Institution: | (1) Research Center for Space Materials Science, Shubnikov Institute of Crystallography, Russian Academy of Sciences, Akademicheskaya ul. 8, Kaluga, 248640, Russia;(2) State Scientific Center of the Russian Federation, Leypunsky Institute for Physics and Power Engineering, pl. Bondarenko 1, Obninsk, Kaluzhskaya oblast, 249033, Russia |
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| Abstract: | The influence of gravitation vector orientation relative to the solidification front on the dopant distribution micro- and macrohomogeneity in vertical oriented crystallization of highly Ga-doped Ge crystals has been investigated using computer simulation. The deviation of the axis for crystal growth relative to the g 0 vector, when a free surface of the melt is present, has been found to provide the formation of striations with a reduced dopant concentration. The influence of the solidification rate, convective and diffusion mass flows on the dopant distribution macrohomogeneity has been investigated. |
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