Negative luminescence in semiconductors: a retrospective view |
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Authors: | V. K. Malyutenko |
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Affiliation: | Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prospect Nauki, 03028, Kiev, Ukraine |
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Abstract: | Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR. |
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Keywords: | Negative luminescence IR devices Stealth effect in IR Photon drag effect Light up-conversion |
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