Fluid–solid interaction finite element modeling of a kinetically driven growth instability in stressed solids |
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Authors: | LS Yellapragada A-V Phan T Kaplan |
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Institution: | (1) Department of Mechanical Engineering, University of South Alabama, Mobile, AL 36608, USA;(2) Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA |
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Abstract: | The kinetically driven growth instability in stressed solids has been a subject of recent investigation as there is an increasing
interest in the effects of non-hydrostatic stresses on crystal growth processes. Recent experimental and modeling work using
advanced numerical methods such as boundary element and level set methods have demonstrated that the effect of stress on the
solid phase epitaxy (SPE) growth of crystalline silicon from the amorphous phase is responsible for the roughening of its
amorphous–crystalline interface. Although our previous model (Phan et al., in Model Simul Mater Sci Eng, 9:309–325, 2001)
has been able to explain the observed interfacial instability during the crystal growth of intrinsic silicon, it has not been
very successful when extended to the SPE growth process of doped silicon. In an effort to identify the sources that may improve
the accuracy and robustness of the previously proposed model, we present in this paper a new approach for modeling the crystal
growth in stressed Si layers. The technique is based upon the coupling of a transition-state-theory-based model, a finite
element model of the sequentially weak coupling analysis for fluid-solid interaction, and the marker particle method. |
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Keywords: | Solid phase epitaxy Fluid– solid interaction Crystal growth Interface growth instability |
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