Excitons and excitonic complexes in GaAs/AlGaAs quantum wells with a low-density quasi-two-dimensional electron and hole channel

The recombination spectra of excitons and excitonic complexes in un-doped GaAs/AlGaAs single quantum wells are investigated. It is shown on the basis of a study of the magnetic-field dependence of the emission spectra and the degree of optical orientation in zero magnetic field and on the basis of electrooptic measurements that not only the density but also the sign of the charge carriers in a well depend strongly on the photoexcitation energy. It is shown on the basis of a comparative analysis of the spin splitting of the recombination lines of free and bound excitons that the recombination line which was attributed earlier to a positively charged exciton corresponds to the recombination of an exciton bound on a neutral acceptor. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 9, 707–713 (10 May 1998)