A study of the properties and microstructure of Ni81Fe19 ultrathin films with MgO |
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Authors: | Minghua Li Gan HanLei Ding Xiaocui WangYang Liu Chun FengHaicheng Wang Guanghua Yu |
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Institution: | Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People′s Republic of China |
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Abstract: | The anisotropic magnetoresistance (AMR) of a Ta (5 nm)/MgO (3 nm)/Ni81Fe19 (10 nm)/MgO (2 nm)/Ta (3 nm) film with MgO-Nano Oxide Layer (NOL) increases dramatically from 1.05% to 3.24% compared with a Ta (5 nm)/Ni81Fe19 (10 nm)/Ta (3 nm) film without the MgO-NOL layer after annealing at 380 °C for 2 h. Although the MgO destroys the NiFe (1 1 1) texture, it enhances the specular electron scattering of the conduction electrons at the NOL interface and suppresses the interface reactions and diffusion at the Ta/NiFe and NiFe/Ta interfaces. The NiFe (1 1 1) texture was formed after the annealing, resulting in a higher AMR ratio. X-ray photoelectron spectroscope results show that Mg and Mg2+ were present in the MgOx films. |
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Keywords: | Ni81Fe19 Anisotropic magnetoresistance Annealing Specular reflection |
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