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Resonant Optical Absorption in Semiconductor Quantum Wells
引用本文:于莉媛 曹俊诚. Resonant Optical Absorption in Semiconductor Quantum Wells[J]. 中国物理快报, 2004, 21(12): 2504-2506
作者姓名:于莉媛 曹俊诚
作者单位:StateKeyLaboratoryofFunctionalMaterialsforInformatics,ShanghaiInstituteofMicrosystemandInformationTechnology,ChineseAcademyofSciences,Shanghai200050
摘    要:We have calculated the intraband photon absorption coefficients of hot two-dimensional electrons interacting with polar-optical phonon modes in quantum wells. The dependence of the photon absorption coefficients on the photon wavelength λ is obtained both by using the quantum mechanical theory and by the balance-equation theory. It is found that the photon absorption spectrum displays a local resonant maximum, corresponding to LO energy, and the absorption peak vanishes with increasing the electronic temperature.

关 键 词:共鸣光学 光子吸收 半导体 量子井

esonant Optical Absorption in Semiconductor Quantum Wells
YU Li-Yuan,CAO Jun-Cheng. esonant Optical Absorption in Semiconductor Quantum Wells[J]. Chinese Physics Letters, 2004, 21(12): 2504-2506
Authors:YU Li-Yuan  CAO Jun-Cheng
Affiliation:State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Abstract:
Keywords:73.21.Fg  78.67.-n  78.67.De  78.40.Fy
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