A high-current and high-temperature 6H-SiC thyristor |
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| Authors: | Xie K. Zhao J.H. Flemish J.R. Burke T. Buchwald W.R. Lorenzo G. Singh H. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ; |
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| Abstract: | A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm2 have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities |
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