Photoluminescence and capacitance transients in highly Mg-doped GaN |
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| Authors: | L. Lu C.L. Yang H. Yan H. Yang Z. Wang J. Wang W. Ge |
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| Affiliation: | (1) Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R. China, CN;(2) Department of Physics, The Hong Kong University of Science and Technology, Kowloon, Hong Kong, HK;(3) State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R. China, CN |
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| Abstract: | Behaviors of the photoluminescence blue-band and near-bandgap peak and the relevant thermal ionization energies of the shallow and deep Mg-related acceptors have been studied, respectively. The 2.989 eV blue-band is attributed to the deep donor–acceptor-pair transitions involving a deep Mg-related acceptor at Ev+0.427 eV. The blueshift with increasing excitation power is explained by variation in the contribution of close and distant donor–acceptor-pairs to the luminescence. The redshift with increasing temperature results from thermal release of carriers from close donor–acceptor-pairs. The 3.26 eV near-bandgap peak is attributed to the shallow donor–acceptor-pair transitions involving a shallow Mg-related acceptor at Ev+0.223 eV. The relevant thermal ionization energies of the shallow and deep Mg-related acceptors, being about Ev+0.16 and Ev+0.50 eV, are determined from deep-level transient Fourier spectroscopy measurements. Received: 11 July 2001 / Accepted: 9 August 2001 / Published online: 2 May 2002 |
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| Keywords: | PACS: 73.50 78.20 81.05 81.40 81.15 |
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