Effects of quantum confined stark effect and well thickness on optical properties of double quantum wells violet InGaN laser diodes

The effects of quantum confined stark effect (QCSE) and quantum well (QW) thickness on the optical properties of violet InGaN laser diodes (LDs) have numerically been investigated. The simulation results indicated that the QCSE greatly effects the optical properties of LDs, where QCSE relates to the QW thickness and it increases when the QW thickness is wider which leads to deteriorating of the optical proprieties of the violet InGaN LD. The polarization in the active region of the InGaN LD has been estimated by the blue shift of the wavelength and it is found that the blue shift of the wavelength depends on the QW thickness. The major simulation result has shown that the best properties of violet InGaN LD can be obtained with smaller QW thickness, where more carriers can be restricted, stayed and overlapped inside the QW which leads to a larger stimulated recombination rate and optical material gain which in turn increase the output power of the LD; while decreasing the threshold current of the LD.