Negative differential resistance behaviour in N-doped crossed graphene nanoribbons |
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Authors: | Chen Ling-N Ma Song-Shan Ouyang Fang-Ping Wu Xiao-Zan Xiao Jin and Xu Hui |
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Institution: | School of Physics Science and Technology, Central South University, Changsha 410083, China; School of Computer Science and Technology, University of South China, Hengyang 421001, China |
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Abstract: | By using first-principles calculations and nonequilibrium Green's function technique, we study elastic transport properties of crossed graphene nanoribbons. The results show that the electronic transport properties of molecular junctions can be modulated by doped atoms. Negative differential resistance (NDR) behaviour can be observed in a certain bias region, when crossed graphene nanoribbons are doped with nitrogen atoms at the shoulder, but it cannot be observed for pristine crossed graphene nanoribbons at low biases. A mechanism for the negative differential resistance behaviour is suggested. |
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Keywords: | transport properties negative differential resistance first-principles crossed graphene nanoribbons |
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