Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization |
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Authors: | Zhang Jin-Feng Xu Sheng-Rui Zhang Jin-Cheng Hao Yue |
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Affiliation: | School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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Abstract: | Nonpolar a-plane GaN epilayers are grown on several r-plane sapphire substrates by metal organic chemical vapour deposition using different nucleation layers: (A) a GaN nucleation layer deposited at low temperature (LT); (B) an AlN nucleation layer deposited at high temperature; or (C) an LT thin AlN nucleation layer with an AlN layer and an AlN/AlGaN superlattice both subsequently deposited at high temperature. The samples have been characterized by X-ray diffraction (XRD), atomic force microscopy and photoluminescence. The GaN layers grown using nucleation layers B and C show narrower XRD rocking curves than that using nucleation layer A, indicating a reduction in crystal defect density. Furthermore, the GaN layer grown using nucleation layer C exhibits a surface morphology with triangular defect pits eliminated completely. The improved optical property, corresponding to the enhanced crystal quality, is also confirmed by temperature-dependent and excitation power-dependent photoluminescence measurements. |
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Keywords: | a-plane GaN metal organic chemical vapour deposition AlN/AlGaN superlattice photoluminescence |
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