Growth of infinite-layer (Sr,Nd)CuO2 films by MBE

Single phase, c-axis oriented infinite layer (IL) Sr_1?xNd_xCuO₂ thin films were epitaxially grown on (1 1 0) DyScO₃ substrates by molecular beam epitaxy (MBE). Electron impact emission spectroscopy (EIES) is the tool of choice for a stringent stoichiometry control which is essential for Sr_1?xNd_xCuO₂ thin film preparation. As-grown films contain excess oxygen and therefore a reduction process is necessary to induce superconductivity. In the present study special attention was paid to the underdoped region since the optimization of the reduction process becomes more difficult for lower doping levels x. Sr_0.95Nd_0.05CuO₂ films (underdoped) became superconducting with $T_c^{\text{onset}}$ = 30 K and $T_c^{\text{zero}}$ = 11.4 K after an annealing procedure.