Impact of doping on carrier recombination and stimulated emission in highly excited GaN:Mg |
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| Authors: | R Aleksiejūnas S Krotkus S Nargelas S Miasojedovas S Juršėnas |
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| Institution: | 1. Province Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, People''s Republic of China;2. Department of Physics, and Institute for Interdisciplinary Research, Jianghan University, Wuhan 430056, People''s Republic of China;1. Department of Surgery, Faculty of Medical and Health Sciences, The University of Auckland, Auckland, New Zealand;2. Department of Neurosurgery, Waikato Hospital, Hamilton, New Zealand;3. Department of Surgery, Palmerston North Hospital, Palmerston North, New Zealand;1. Institute of Experimental Physics, University of Wroc?aw, pl. M. Borna 9, Wroc?aw, Poland;2. Faculty of Science, SEES, University of Portsmouth, Portsmouth, United Kingdom;1. Department of Electronic Engineering, Feng Chia University, 100 Wenhwa Road, Taichung, Taiwan 40724, Republic of China;2. Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China |
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| Abstract: | Light-induced transient grating and photoluminescence measurements were employed for carrier recombination studies in variously Mg doped GaN layers. Carrier lifetime and ambipolar diffusion coefficient were found to decrease with doping from 210 to 20 ps and from 2.0 to 0.9 cm2/s,respectively, which proved the degradation of electrical quality of the layers. A threshold of stimulated emission was found to depend non-monotonously on doping and had the lowest value of 0.19 mJ/cm2 in the most doped layer. This dependence was explained in terms of degeneracy of the hole system. |
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