Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation |
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| Authors: | C. Nyamhere A.G.M. Das F.D. Auret A. Chawanda C.A. Pineda-Vargas A. Venter |
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| Affiliation: | 1. Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031, South Africa;2. Department of Physics, University of Pretoria, Pretoria 0002, South Africa;3. School of Information Technology, Monash South Africa, Roodepoort 1725, South Africa;4. iThemba LABS, Somerset West 7129, South Africa;5. Faculty of Health and Wellness Sciences, C.P.U.T., P.O. Box 1906, Bellville 7535, South Africa;1. Institute of Geological Sciences, Jagiellonian University, ul. Oleandry 2a, 30-063 Kraków, Poland;2. Faculty of Earth Sciences, University of Silesia, ul. B?dzińska 60, 41-200 Sosnowiec, Poland;3. Laboratoire de Biogéochimie Moléculaire, CNRS UMR 7177, Université de Strasbourg, Ecole Européenne de Chimie, Polymères et Matériaux, 25 rue Becquerel, 67200 Strasbourg, France;1. LED-IT Fusion Technology Research Center, Yeungnam University, Gyeongsan 38541, Republic of Korea;2. Department of Mechanical Engineering, Chadalawada Ramanamma Engineering College, Tirupati 517-506, India;3. School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea;1. Department of Microsystems Engineering,University of Freiburg, Georges-Köhler-Allee 106, 79110 Freiburg, Germany;2. Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany;3. Australian Resources Research Centre, Curtin University, 26 Dick Perry Avenue, Kensington 6151, Western Australia;1. University Department of Physics, Ranchi University, Ranchi 834008, India;2. Department of Electrical Engineering, College of Technology and Engineering, Udaipur 313001, India;3. Institute Instrumentation Centre, Indian Institute of Technology, Roorkee 247667, India |
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| Abstract: | Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons having a fluence of 1×1013 protons/cm2. The results show that proton irradiation resulted in primary hole traps at EV +0.15 and EV +0.30 eV and electron traps at EC ?0.38, EC ?0.32, EC ?0.31, EC ?0.22, EC ?0.20, EC ?0.17, EC ?0.15 and EC ?0.04 eV. Defects observed in this study are compared with those introduced in similar samples after MeV electron irradiation reported earlier. EC ?0.31, EC ?0.17 and EC ?0.04, and EV +0.15 eV were not observed previously in similar samples after high energy irradiation. Results from this study suggest that although similar defects are introduced by electron and proton irradiation, traps introduced by the latter are dose dependent. |
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