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高功率半导体量子阱激光器测试中的突变性损伤
引用本文:王立军 王乐 等. 高功率半导体量子阱激光器测试中的突变性损伤[J]. 发光学报, 2002, 23(5): 477-480
作者姓名:王立军 王乐 等
作者单位:[1]中国科学院长春光学精密机械与物理研究所,吉林长春130022 [2]吉林大学电子科学与工程学院,吉林长春130026
摘    要:在使用综合参数测试仪测试808nm发射的半导体量子阱激光器的过程中,出现了一种由电浪涌所导致的灾变性损伤。通过测试的功率曲线和伏安特性曲线,断定激光器出现了突变性的损伤,同时测试的发射光谱不再是激射光谱,而是由自发辐射所产生的荧光光谱。由扫描电镜(SEM)观察到了激光器的腔面膜出现了熔化,证实激光器的确发生了灾变性损伤。作为对比,我们引用了另一种在测试中发现的快速退化现象,对两种退化出现的原因进行了理论上的分析,了解到激光器的退化主要还是由器件本身的材料、结构以及后期的工艺过程所决定的,在测试器件过程中电浪涌不只不过会加速或产生突然灾变性退化。通过测试我们建立了一种比较简单的检验一个激光器质量可靠性的方法,所以理解由电浪涌所引起的退化行为是非常重要的。

关 键 词:高功率半导体 量子阱激光器 测试 电浪涌 灾变性损伤 激光二极管
文章编号:1000-7032(2002)05-0477-04
修稿时间:2002-04-03

Catastrophic Damage of High-power Semiconductor Quantum Well Laser During the Measurement
CAO Yu lian ,WANG Le ,PAN Yu zhai ,LIAO Xin sheng ,CHENG Dong ming ,LIU Yun ,WANG Li jun. Catastrophic Damage of High-power Semiconductor Quantum Well Laser During the Measurement[J]. Chinese Journal of Luminescence, 2002, 23(5): 477-480
Authors:CAO Yu lian   WANG Le   PAN Yu zhai   LIAO Xin sheng   CHENG Dong ming   LIU Yun   WANG Li jun
Affiliation:CAO Yu lian 1,WANG Le 2,PAN Yu zhai 1,LIAO Xin sheng 1,CHENG Dong ming 1,LIU Yun 1,WANG Li jun 1
Abstract:This paper manifested a catastrophic damage due to electrical damage during the measurement. However, electrical surge is caused by external conditions such as an electrical biasing situation, as a result, the p n junction is damaged or breakdown so that the current voltage relation become electrically short at the instantaneous current, which can be manifested from the P I curve and V I characteristics: a sudden decrease in light output power is observed, moreover, the voltage is no longer changing dependence on the increasing of current with the drop off of output power. According to N. I. Katasavets, et al ., a conclusion can be made that fact overheating at J <2 000/cm 2 in all types of LDs is due to the absorption of intrinsic laser radiation at the facet and to process nonradiative surface recombination. Facet overheating has superlinear dependence on output optical power. Then through the scanning electron microscopy (SEM), we indeed find that the melting region occured, also there is cracks at the facet which may be brought by the stress induced by cleaving to form the facets, so laser no longer stimulated emitting, by contrast, another rapid degration is also shown in the paper, at the same time, both degrations were analyzed on the basis of theory, which manifested the degration of laser are principally due to material, structure and process of the laser, electrical surge is only accelerate the degration which origined from material or fabrication, but it is still important to understand the catastrophic or rapid damage related to electrical surge during the device measuring.
Keywords:electrical surge  catastrophic damage(CD)  laser diodes(LD)
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