Giant magnetoresistance effect in nanostructures consisting of magnetic–electric barriers |
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Authors: | Wei-Hua Tang Chun-Shu LiYong-Hong Kong Gui-Lian Zhang |
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Institution: | Department of Electronic Engineering and Physics, Hunan University of Science and Engineering, Yongzhou 425100, Hunan, People''s Republic of China |
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Abstract: | The GMR effect in magnetic–electric barrier nanostructure, which can be realized experimentally by depositing two parallel metallic ferromagnetic strips with an applied voltage on the top of heterostructure, is investigated theoretically. It is shown that a considerable GMR effect can be achieved in such nanosystems due to the significant transmission difference for electrons tunneling through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio is strongly dependent upon the applied voltage to metallic ferromagnetic strips in nanosystems, thus may leading to voltage-tunable GMR devices. |
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