原子力显微技术研究ZnO纳米棒的压电放电特性

在原子力显微镜的接触扫描模式下，研究了半导体ZnO纳米棒的压电放电特性.采用两步湿化学法制备沿c轴择优生长的ZnO纳米棒阵列；利用镀Pt探针接触扫描ZnO纳米棒获得峰值达120 pA电流脉冲，脉冲持续时间可达30 ms，电流脉冲与纳米棒的形貌存在对应关系.镀Pt探针与ZnO纳米棒接触形成肖特基二极管，I-V特性研究表明放电的ZnO纳米棒压电电势必须大于03 V，以驱动肖特基二极管并输出电流；放电时肖特基二极管的结电阻达吉欧(GΩ)量级，是影响压电电势输出的主要因关键词：ZnO纳米棒压电放电肖特基接触

Piezoelectric discharge characteristic of ZnO nanorod studied with atomic force microscopy

Piezoelectric discharge characteristic of semiconductor ZnO nanorod was studied with atomic force microscope in contact mode. The c-axial orientation ZnO nanorod array film was fabricated with two-step wet-chemical method. Electric pulses were got when Pt coated probe contact-scans the ZnO nanorod, their peak value reaches 120 pA. The electric pulse is related with the topography of ZnO nanorod and has a time duration of 30 ms. The contact of Pt coated probe and ZnO nanorod behaves as a Schottky diode. The I-V curve showed the piezoelectric voltage must be larger than 0.3 V to drive Schottky diode. The resistance of Schottky contact has a magnitude of GΩ order during piezoelectric discharge, which is the major factor impacting the output of piezoelectric potential.