原子力显微技术研究ZnO纳米棒的压电放电特性

在原子力显微镜的接触扫描模式下，研究了半导体ZnO纳米棒的压电放电特性.采用两步湿化学法制备沿c轴择优生长的ZnO纳米棒阵列；利用镀Pt探针接触扫描ZnO纳米棒获得峰值达120 pA电流脉冲，脉冲持续时间可达30 ms，电流脉冲与纳米棒的形貌存在对应关系.镀Pt探针与ZnO纳米棒接触形成肖特基二极管，I-V特性研究表明放电的ZnO纳米棒压电电势必须大于03 V，以驱动肖特基二极管并输出电流；放电时肖特基二极管的结电阻达吉欧(GΩ)量级，是影响压电电势输出的主要因 关键词： ZnO 纳米棒 压电放电 肖特基接触

Piezoelectric discharge characteristic of ZnO nanorod studied with atomic force microscopy

Piezoelectric discharge characteristic of semiconductor ZnO nanorod was studied with atomic force microscope in contact mode. The c-axial orientation ZnO nanorod array film was fabricated with two-step wet-chemical method. Electric pulses were got when Pt coated probe contact-scans the ZnO nanorod, their peak value reaches 120 pA. The electric pulse is related with the topography of ZnO nanorod and has a time duration of 30 ms. The contact of Pt coated probe and ZnO nanorod behaves as a Schottky diode. The I-V curve showed the piezoelectric voltage must be larger than 0.3 V to drive Schottky diode. The resistance of Schottky contact has a magnitude of GΩ order during piezoelectric discharge, which is the major factor impacting the output of piezoelectric potential.