Defects responsuble for electrical property changes in irradiated oxides |
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| Authors: | I D Alecu L N Cojocaru |
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| Institution: | Institute for Atomic Physics , P.O. Box, 35 , Bucharest , Rumania |
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| Abstract: | Abstract A comparison is made between the activation energies for post-irradiation thermal recovery of electrical properties of NiO, Cr2O2 and UO2-SiO2 which were determined from previously published data, and the activation energies found in the literature for volume diffusion of the component atoms. It is shown that oxygen vacancies are most probably responsible for irradiation-induced changes in electrical properties of NiO and Cr2O2. Oxygen defects contribute also to the changes in electrical properties observed at UO2-SiO2. |
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