Optical mixing in InSb |
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Authors: | M. S. Sodha P. K. Dubey S. K. Sharma P. K. Kaw |
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Affiliation: | 1. Physics Department , Indian Institute of Technology , Delhi, New Delhi, 29, India;2. Plasma Physics Laboratory , Princeton University , Princeton, U.S.A. |
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Abstract: | Abstract In this paper, the authors have derived the expression for the combination frequency components ω3 = 2ω1-ω2 in the current density by solving the appropriate Boltzmann transfer equation for electrons, when two laser beams of frequencies of ω1 and ω2 are incident on a degenerate nonparabolic semiconductor viz. InSb; the nonlinearity due to collision mechanism as well as the nonparabolicity of conduction band has been taken into account. The ionized impurity scattering has been considered to be the sole mechanism of electron scattering. The expression for the current density is further substituted in the wave equation to obtain the expression for the amplitude of combination frequency wave in the transmitted component. The calculated value of output power of frequency ω2 is found to be 1/10th of the experimental value (Patel, Slusher and Fleury, 1966), (7) and thus is in better agreement as compared to earlier investigators (Wolff and Pearson, 1966; Kaw, 1968). (5, 10) |
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Keywords: | ESR excitons alkali halides luminescence recombination trapped electrons |
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