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Defect production rates in electron irradiated aluminium
Authors:J Wurm  F Dworschak  H Schuster  H Wollenberger
Institution:1. Van de Graaff-Labor Aachen, der Kernforschungsanlage , Jülich GmbH und Institut für Allgemeine Metallkunde und Metallphysik, Technische Hochschule Aachen , Germany;2. Degussa, Metall-Labor , D-645, Hanau, 622, Postfach;3. Van de Graaff-Labor , 51 Aachen, Birkenweg, 14
Abstract:Abstract

The cross section for atomic displacement has been determined at 7.5°K by means of electrical resistivity measurements in electron irradiated aluminium up to transferred energies of 1100 eV. These data and those from the literature have been evaluated with respect to the displacement function (DF). Below 200 eV the DF could be derived from the data with sufficient accuracy by solving the integral equation which describes the displacement cross section. Above 200 eV a family of non-linear and linear DF's has been found which fits the data within the experimental error. From the linear DF's one obtains an average threshold energy of (62±6) eV according to Kinchin and Pease.
Keywords:binary  ternary  amorphous  conductivity
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